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Silicon Carbide (SiC) · Power semiconductors

MTS/Sr. MTS Engineer – Discrete Power FET Technology Development

New York$147k–$250k/yrPosted 3 months ago
Electrical Electronics And Computer Hardware EngineeringUnspecified
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Opens the source posting on hctz.fa.us2.oraclecloud.com

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Qualifications

  • PhD, Master’s, or Bachelor's degree in Electrical Engineering, Materials Science, Electrical Engineering, Physics, or a related field.

  • Proven experience in semiconductor device design and development , specifically with discrete power FETs (trench MOSFETs, superjunction, or related structures).

  • Experience with post wafer fab operations such as Back-Grind/Back Metallization, Packaging, Dicing and Singulation, module construction.

  • Experience with wafer level testing, ILT/WAT/PCM and Probe. Familiarity with package level Final Testing especially for discrete power devices

  • Experience taking technologies from development stage, through optimization and qualification and into volume ramp.

  • Strong understanding of semiconductor physics, device reliability, and fabrication processes , including experience in 300mm fabrication .

  • Demonstrated ability to translate high‑level objectives into actionable engineering plans and drive projects independently.

  • Strong data‑driven problem‑solving skills using DOE, statistical analysis, SPC, 6‑sigma, and FMEA methodologies.

  • Proficiency with TCAD, SPICE , and relevant simulation tools; experience in electro‑thermal and parasitic modeling preferred.

  • Track record of leading or significantly contributing to technology development projects with measurable impact on performance, reliability, yield, or cost .

  • Excellent communication skills with the ability to present complex technical topics clearly to both engineering and executive audiences.

  • Ability to manage multiple projects simultaneously in a fast‑paced development environment

  • Preferred Skills

  • Experience with high‑voltage and high‑current power device applications .

  • Knowledge of automotive AEC‑Q101 reliability testing , including HTGB, HTRB, power cycling, UIS, SOA, and mission‑profile testing.

  • Familiarity with wide‑bandgap (SiC/GaN) devices , electro‑thermal coupling, ruggedness physics, and advanced packaging (DFN, TO‑leadframe, copper clip, modules).

  • Hands‑on experience with design rules, device layout, and design environments .

  • Strong background in statistical analysis and data tools (JMP, Python, MATLAB).

  • Understanding of industry standards, safety, and regulatory requirements for power electronics

Salary: onsemi is excited to share the base salary range for this position is $147,000 to $250,000 exclusive of fringe benefits or potential bonuses. The final pay rate for the successful candidate will depend on geographic location, skills, education, experience, and/or consideration of internal equity of our current team members. We also offer a competitive benefits package. https://www.onsemi.com/site/pdf/Benefits-Summary-USA.pdf

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