Staff Device Engineer

Description

Responsibilities Design and qualify high - voltage GaN power devices integrated in high performance and high reliability products (including automotive) . Perform device/process simulations and device layout for GaN power devices. Assignments will include power device creation, fabrication and full characterization , and issuing technical reports . Evaluate electrical / thermal performance and reliability of GaN power devices . Prior experience in Si power device development is a plus . Interact with other departments for best use of Company’s technologies and to support key customer requirements . Requirements B . Sc degree in Electrical Engineering with 8 years’ working experience or M . Sc degree in Electrical Engineering with 6 years’ working experience or Ph. D degree in Electrical Engineering with 3 years’ working experience Proven track record of independently designing and taking into volume production of high-voltage GaN power devices Sound understanding of semiconductor device physics , especially WBG Proficient in TCAD simulation and CADENCE layout tools Hands-on experience with high - voltage testing and data acquisition systems Strong communication and collaboration skills