Advanced RF Integrated Circuit Designer

Role Overview: As an RFIC Design Engineer, you will bring specialized RF and microwave circuit expertise to one of the most demanding application spaces in semiconductors high-speed automotive SerDes SoCs. At data rates exceeding 20 Gbps, RF design principles dominate every aspect of the silicon from transistor-level matching networks to on-chip transmission lines and impedance-controlled interconnects. You will design RF-grade circuits and front-ends that ensure robust, low-noise, low-jitter performance in the electromagnetically hostile automotive environment. Key Responsibilities: - Design RF and high-frequency analog circuits for high-speed SerDes PHY SoCs including LNAs, mixers, VCOs, PLL building blocks, and high-speed I/O drivers operating at multi-GHz frequencies - Develop impedance-matched RF front-ends for high-speed SerDes transmitters and receivers, minimizing signal reflections, return loss, and insertion loss across the target frequency range - Design on-chip passive structures transmission lines, baluns, transformers, and inductors using electromagnetic (EM) simulation to meet RF performance targets - Address RF signal integrity challenges crosstalk, substrate coupling, ground bounce, and power supply noise in complex mixed-signal SoC environments - Develop EMI-resilient circuit topologies for automotive Ethernet PHY front-ends that maintain performance under conducted and radiated EMI per automotive standards (CISPR 25, ISO 11452) - Perform EM/RF simulation using tools such as Cadence EMX, Keysight ADS, ANSYS HFSS, or Momentum for passive structure characterization and signal integrity analysis - Collaborate with analog and digital teams for RF-aware SoC integration managing RF-to-digital isolation, substrate noise coupling, and mixed-signal co-existence - Conduct RF characterization and measurement on silicon S-parameter measurements, noise figure, phase noise, and spurious emission characterization in lab environments - Contribute to IP generation, patent filings, and competitive RF innovations for next-generation SerDes products Required Qualifications: - Education: B.Tech / M.Tech / Ph.D. in RF Engineering / Microwave Engineering / Electronics / Electrical Engineering - Experience: 310 years of RFIC or high-frequency analog IC design experience - Strong expertise in RF circuit design LNAs, VCOs, PLLs, mixers, power amplifiers, or high-speed I/O drivers at GHz frequencies - Proficiency in RF/EM simulation tools Cadence Spectre RF, Keysight ADS, ANSYS HFSS, Cadence EMX, or equivalent - Deep understanding of impedance matching, S-parameters, noise figure, and RF performance metrics - Experience designing on-chip passive components inductors, transformers, transmission lines in standard CMOS processes - Knowledge of substrate coupling, crosstalk, and EMI mitigation in mixed-signal SoC environments Preferred / Good-to-Have Skills: - Experience designing RF circuits for high-speed SerDes PHY or wireline applications (> 10 GHz) - Background in automotive EMC/EMI standards CISPR 25, ISO 11452, IBIS-AMI modeling - Familiarity with mm-wave circuit design (28 GHz, 60 GHz, 77 GHz) for automotive radar adjacency - Experience with RF wafer probing and on-silicon characterization (S-parameter, noise figure, phase noise) - Knowledge of process design kits (PDK) for RF-optimized CMOS/SiGe technologies - Background in ESD-hardened RF front-end design for automotive environments Role Overview: As an RFIC Design Engineer, you will bring specialized RF and microwave circuit expertise to one of the most demanding application spaces in semiconductors high-speed automotive SerDes SoCs. At data rates exceeding 20 Gbps, RF design principles dominate every aspect of the silicon from transistor-level matching networks to on-chip transmission lines and impedance-controlled interconnects. You will design RF-grade circuits and front-ends that ensure robust, low-noise, low-jitter performance in the electromagnetically hostile automotive environment. Key Responsibilities: - Design RF and high-frequency analog circuits for high-speed SerDes PHY SoCs including LNAs, mixers, VCOs, PLL building blocks, and high-speed I/O drivers operating at multi-GHz frequencies - Develop impedance-matched RF front-ends for high-speed SerDes transmitters and receivers, minimizing signal reflections, return loss, and insertion loss across the target frequency range - Design on-chip passive structures transmission lines, baluns, transformers, and inductors using electromagnetic (EM) simulation to meet RF performance targets - Address RF signal integrity challenges crosstalk, substrate coupling, ground bounce, and power supply noise in complex mixed-signal SoC environments - Develop EMI-resilient circuit topologies for automotive Ethernet PHY front-ends that maintain performance under conducted and radiated EMI per automotive standards (CISPR 25, ISO 11452) - Perform EM/RF simulation using tools