RFIC Design Engineer High-Speed Automotive SerDes SoCs

As an RFIC Design Engineer at Texas Instruments, you will bring specialized RF and microwave circuit expertise to the development of high-speed automotive SerDes SoCs. Your role will involve designing RF and high-frequency analog circuits, developing impedance-matched RF front-ends, designing on-chip passive structures, addressing RF signal integrity challenges, developing EMI-resilient circuit topologies, performing EM/RF simulations, collaborating with cross-functional teams, conducting RF characterization and measurements, and contributing to IP generation and patent filings for next-generation SerDes products. Key Responsibilities: - Design RF and high-frequency analog circuits for high-speed SerDes PHY SoCs, including LNAs, mixers, VCOs, PLL building blocks, and high-speed I/O drivers operating at multi-GHz frequencies. - Develop impedance-matched RF front-ends for high-speed SerDes transmitters and receivers, minimizing signal reflections, return loss, and insertion loss across the target frequency range. - Design on-chip passive structures such as transmission lines, baluns, transformers, and inductors using electromagnetic (EM) simulation to meet RF performance targets. - Address RF signal integrity challenges like crosstalk, substrate coupling, ground bounce, and power supply noise in complex mixed-signal SoC environments. - Develop EMI-resilient circuit topologies for automotive Ethernet PHY front-ends that maintain performance under conducted and radiated EMI per automotive standards (CISPR 25, ISO 11452). - Perform EM/RF simulation using tools such as Cadence EMX, Keysight ADS, ANSYS HFSS, or Momentum for passive structure characterization and signal integrity analysis. - Collaborate with analog and digital teams for RF-aware SoC integration, managing RF-to-digital isolation, substrate noise coupling, and mixed-signal co-existence. - Conduct RF characterization and measurement on silicon, including S-parameter measurements, noise figure, phase noise, and spurious emission characterization in lab environments. - Contribute to IP generation, patent filings, and competitive RF innovations for next-generation SerDes products. Required Qualifications: - Education: B.Tech / M.Tech / Ph.D. in RF Engineering / Microwave Engineering / Electronics / Electrical Engineering. As an RFIC Design Engineer at Texas Instruments, you will bring specialized RF and microwave circuit expertise to the development of high-speed automotive SerDes SoCs. Your role will involve designing RF and high-frequency analog circuits, developing impedance-matched RF front-ends, designing on-chip passive structures, addressing RF signal integrity challenges, developing EMI-resilient circuit topologies, performing EM/RF simulations, collaborating with cross-functional teams, conducting RF characterization and measurements, and contributing to IP generation and patent filings for next-generation SerDes products. Key Responsibilities: - Design RF and high-frequency analog circuits for high-speed SerDes PHY SoCs, including LNAs, mixers, VCOs, PLL building blocks, and high-speed I/O drivers operating at multi-GHz frequencies. - Develop impedance-matched RF front-ends for high-speed SerDes transmitters and receivers, minimizing signal reflections, return loss, and insertion loss across the target frequency range. - Design on-chip passive structures such as transmission lines, baluns, transformers, and inductors using electromagnetic (EM) simulation to meet RF performance targets. - Address RF signal integrity challenges like crosstalk, substrate coupling, ground bounce, and power supply noise in complex mixed-signal SoC environments. - Develop EMI-resilient circuit topologies for automotive Ethernet PHY front-ends that maintain performance under conducted and radiated EMI per automotive standards (CISPR 25, ISO 11452). - Perform EM/RF simulation using tools such as Cadence EMX, Keysight ADS, ANSYS HFSS, or Momentum for passive structure characterization and signal integrity analysis. - Collaborate with analog and digital teams for RF-aware SoC integration, managing RF-to-digital isolation, substrate noise coupling, and mixed-signal co-existence. - Conduct RF characterization and measurement on silicon, including S-parameter measurements, noise figure, phase noise, and spurious emission characterization in lab environments. - Contribute to IP generation, patent filings, and competitive RF innovations for next-generation SerDes products. Required Qualifications: - Education: B.Tech / M.Tech / Ph.D. in RF Engineering / Microwave Engineering / Electronics / Electrical Engineering.