APR/Physical Design Engineer 1

Job Description:

'-Memory architecture design (SRAM, DRAM, MRAM, RRAM, PCRAM and eFlash)

-Read and write critical path design and analysis

-Design of key building blocks (sensing, analog, high voltage, DFT)

-Chip-level design verification

-Embedded non-volatile memory compiler and productization

-Co-work with product/reliability engineer on silicon characterization and reliability qualification

Qualifications

• '-The candidates should have at least bachelor degree in relevant field.

• -Memory experts in the field of SRAM.

• -Familiar with bit cell characteristics (Vmin, bit cell performance, write margin), sense amplifier design, high sigma variation analysis, race check, margin signoff.

• -Knowledge on high speed and low Vmin design is a plus.

• -Highly welcome candidates who have less experience but have good Memory Design design experience, working attitude and are self-motivated.

• -Good command of Japanese. English is a plus.

• All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, or disability.